Betekenis van:
vacuum chamber

Voorbeeldzinnen

1. The addition of gases to the vacuum chamber during the coating process to synthesize compound coatings is an ordinary modification of the process.
2. Other information: subsidiary company of AEOI, which has sought glass fibres, vacuum chamber furnaces and laboratory equipment for Iran's nuclear programme.
3. Batch mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with temperature control capability of the mixing chamber and having all of the following, and specially designed components therefor:
4. The sample chamber (figure 3a) is connected to the vacuum line via a valve and a differential manometer (U-tube containing a suitable manometer fluid) which serves as zero indicator.
5. Continuous mixers with provision for mixing under vacuum in the range of zero to 13.326 kPa and with a temperature control capability of the mixing chamber having any of the following, and specially designed components therefor:
6. Continuous mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with a temperature control capability of the mixing chamber having any of the following, and specially designed components therefor:
7. Batch mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with temperature control capability of the mixing chamber and having all of the following, and specially designed components therefor:
8. At the end of the cycle the residual ash is removed from the primary chamber by a vacuum extraction system into enclosed bags, which are then sealed before being transported off-site for disposal.
9. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or
10. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or
11. operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or
12. Equipment specially designed for equipment controlled by 3B001.e. and designed according to the manufacturer's specifications or optimised for use in the production of semiconductor devices with critical dimensions of 180 nm or less; e. Automatic loading multi-chamber central wafer handling systems, having all of the following: 1. Interfaces for wafer input and output, to which more than two pieces of semiconductor processing equipment are to be connected; and 2. Designed to form an integrated system in a vacuum environment for sequential multiple wafer processing; Note: 3B001.e. does not control automatic robotic wafer handling systems not designed to operate in a vacuum environment. f. Lithography equipment, as follows: 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods, having any of the following:
13. Continuous mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with a temperature control capability of the mixing chamber having any of the following, and specially designed components therefor: a. Two or more mixing/kneading shafts; or b. A single rotating shaft which oscillates and having kneading teeth/pins on the shaft as well as inside the casing of the mixing chamber. 1B119 Fluid energy mills usable for grinding or milling substances specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls, and specially designed components therefor. 1B201 Filament winding machines, other than those specified in 1B001 or 1B101, and related equipment, as follows: